FNK7A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK7A uses advanced trench technology to provide exce...
FNK7A
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK7A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .
General Features
● VDS = 20V,ID =6A RDS(ON) < 21mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM application ● Load switch
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK7A
FNK7A
SOT23-6L
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction an...