FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK65N07A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK65N07A
General Features
● VDS =65V,ID =85A RDS(ON) < 7.7mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
● High density cell design for ultra lo...
