FNK6578K

FNK6578K FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6578K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 65V,ID =78A RDS(ON) < 8.2mΩ @ VGS=10V (Typ:6.7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply TO-252 top view Package Marking and Ordering Information Device Marking Device Device Package FNK6578K FNK6578K TO-252 Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Curr...