FNK N-Channel Enhancement Mode Power MOSFET
FNK6050C
Description
The FNK6050C uses advanced trench technology and desi...
FNK N-Channel Enhancement Mode Power
MOSFET
FNK6050C
Description
The FNK6050C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6050C
FNK6050C
TO-251
Reel Size -
Tape width -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous
ID
Dr...