FNK5410D
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK5410D uses advanced trench technology and desig...
FNK5410D
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK5410D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 12A RDS(ON) <138mΩ @ VGS=10V (Typ:121mΩ) RDS(ON) <152mΩ @ VGS=4.5V (Typ:132mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK5410D
FNK5410D
TO-252
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
I...
