30V P-Channel MOSFET
FNK3317P
General Description
The FNK3317P combines advanced trench MOSFET technology with a low r...
30V P-Channel
MOSFET
FNK3317P
General Description
The FNK3317P combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V)
-30V -12A < 15mΩ < 25mΩ
Top View
18 27 36 45
D
G S
V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=70°C
Pulsed Drain Current C
ID IDM
TC=25°C Power Dissipation B TC=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±20 -12 -7.8 -45 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 30 65 30
Max 40 80 40
Units V V
A
W °C
Units °C/W °C/W ...
