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FNK3316 Datasheet

Part Number FNK3316
Manufacturers FNK
Logo FNK
Description N-Channel MOSFET
Datasheet FNK3316 DatasheetFNK3316 Datasheet (PDF)

30V N-Channel General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 10A < 12m Ω < 15.8 mΩ FNK3316 Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maxi.

  FNK3316   FNK3316






Part Number FNK3318
Manufacturers FNK
Logo FNK
Description N-Channel MOSFET
Datasheet FNK3316 DatasheetFNK3318 Datasheet (PDF)

30V N-Channel MOSFET General Description The FNK3318 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 80A < 6.5mΩ < 10 mΩ FNK3318 Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C un.

  FNK3316   FNK3316







Part Number FNK3317P
Manufacturers FNK
Logo FNK
Description P-Channel MOSFET
Datasheet FNK3316 DatasheetFNK3317P Datasheet (PDF)

30V P-Channel MOSFET FNK3317P General Description The FNK3317P combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -12A < 15mΩ < 25mΩ Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS .

  FNK3316   FNK3316







N-Channel MOSFET

30V N-Channel General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 10A < 12m Ω < 15.8 mΩ FNK3316 Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain CurrentG TA=25°C TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maxi.


2018-03-16 : GR310    GR1005    GR101    GR102    GR104    GR106    GR108    GR110    QH11121-FP0-4F    QH11123-FP0-4F   


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