20V Dual N-Channel MOSFET
General Description
The FNK2220 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V)
20V 3.3A < 45mΩ < 60mΩ
FNK2220
D1 D2
G1 G2 S1 S2
DFN 2x2 Package S1 G1 D2
Pin 1
Pin 1 Top
D1 G2 S2 Bottom
Absolute Maximum Ratings TA=25°C unless otherwise noted
Paramete.
Dual N-Channel MOSFET
20V Dual N-Channel MOSFET
General Description
The FNK2220 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V)
20V 3.3A < 45mΩ < 60mΩ
FNK2220
D1 D2
G1 G2 S1 S2
DFN 2x2 Package S1 G1 D2
Pin 1
Pin 1 Top
D1 G2 S2 Bottom
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±8 3.3 2.6 16 1.5 0.95
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B
t ≤ 10s Steady-State t ≤ 10s Steady-State
Symbol Rθ.