FNK N-Channel Enhancement Mode Power MOSFET
FNK08N03DA
Description
The FNK08N03DA uses advanced trench technology and ...
FNK N-Channel Enhancement Mode Power
MOSFET
FNK08N03DA
Description
The FNK08N03DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V
(Typ:5mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Schematic diagram TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK08N03DA FNK08N03DA
TO-252
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source Voltag...