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FNK03N02A Datasheet

Part Number FNK03N02A
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK03N02A DatasheetFNK03N02A Datasheet (PDF)

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) <3.5 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Spec.

  FNK03N02A   FNK03N02A






Part Number FNK03N02L
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK03N02A DatasheetFNK03N02L Datasheet (PDF)

FNK03N02L FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V (Typ:1.4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Speci.

  FNK03N02A   FNK03N02A







Part Number FNK03N02E
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK03N02A DatasheetFNK03N02E Datasheet (PDF)

FNK03N02E FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissip.

  FNK03N02A   FNK03N02A







Part Number FNK03N02D
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK03N02A DatasheetFNK03N02D Datasheet (PDF)

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) <3.5 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Spec.

  FNK03N02A   FNK03N02A







Part Number FNK03N02
Manufacturers FNK
Logo FNK
Description N-Channel Power MOSFET
Datasheet FNK03N02A DatasheetFNK03N02 Datasheet (PDF)

FNK03N02 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <2.5mΩ @ VGS=10V (Typ:1.9mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special.

  FNK03N02A   FNK03N02A







N-Channel Power MOSFET

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) <3.5 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply FNK03N02A Schematic diagram To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK03N02A FNK03N02A TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source .


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