FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK01NS12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK01NS12T
General Features
● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V
(Typ:3.3mΩ)
● High density cell design for ultra low Rdson ● Fully ...
