FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK01NS12 uses advanced trench technology and design to prov...
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK01NS12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK01NS12
General Features
● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V
(Typ:3.3mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK01NS12
FNK01NS12
TO-220
Reel Size -
Tape width -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain ...