● VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）
● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation...
FNK01N30T PDF File
