● VDS =100V,ID =170A RDS(ON) <5.0mΩ @ VGS=10V
(Typ:4.1mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation...
FNK01N17T PDF File
