FMS2020QFN

Preliminary Data Sheet 2.2 FMS2020QFN GaAs Multi-Purpose Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications High isolation, 25dB typ at 2.5GHz Low insertion loss, 0.5dB typ at 2.5GHz Low insertion loss, 1.0dB typ at 6GHz P0.1dB > 38dBm at 2GHz Functional Schematic ANT V1 V2 RF1 RF2 Description and Applications: The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers leading edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C band wireless applications and WLAN access points where high linearity switching is required. Electrical Specifications: Parameter (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz Min Typ 0.4 0.45 0.55 0.65 0.75 0.95 23 18 30 25 18 >38 >38 >37 >33 <-70 <-70 <0.3 <1.0 <10 Max Units dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBc dBc µs µs µA Insertion Loss 2.0 – 3.0 GHz 3.0 – 4.0 GHz 4.0 – 5.0 GHz 5.0 –6.0 GHz Return Loss 0.5 – 2.5 GHz 2.5 – 5.0 GHz 0.5 – 1.0 GHz 1.0 – 2.5 GHz 2.5 – 6.0 GHz 1.0 GHz Isolation Input power at 0.1dB compression point 2.0 GHz 2.5 GHz 6.0 GHz 2nd Harmonic Level 3rd Harmonic Level Switching speed : T rise, T fall T on, T off Control Current 1 GHz, Pin ...