FMS2011

Preliminary Data Sheet 1.1 FMS2011 SP6T GaAs Multi-Band GSM Antenna Switch Features: ANT ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS power levels Very high Tx-Rx isolation >45dB typ. at 1.8GHz Very high Tx-Tx isolation >30dB typ. at 1.8GHz Very low Tx Insertion loss Very low control current RX1 TX1 VTX1 VRX1 RX2 VRX2 RX3 VTX2 TX2 VRXC VRX3 RX4 VRX4 Description and Applications: The FMS2011 is a low loss, high power and linear single pole six throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers leading edge performance optimised for switch applications. The FMS2011 is designed for use in dual, tri and quad – band GSM handset antenna switch modules and RF front-end modules. Electrical Specifications: Parameter Tx Insertion Loss (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz Min __ __ __ __ __ 30 25 45 40 __ __ Typ 0.5 0.6 0.6 0.8 23 33 31 50 45 -75 -75 Max 0.7 0.9 0.8 1.2 __ __ __ __ __ -70 -70 Units dB dB dB dB dB dB dB dB dB dBc dBc Rx Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz Return Loss Isolation TX-RX Isolation TX-TX 2nd Harmonic Level 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 ...