FMS2002QFNES1

Preliminary Data Sheet 1.0 FMS2002QFN ES1 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Throw MMIC Antenna Switch designed for use in Dual-band handsets GSM900 and GSM1800/1900 combinations. The switch is designed with one antenna port that can be routed to any one of the three RF ports. Features · · · · · · Low insertion loss (0.5dB @ 900 MHz) Operation down to 2V control 3 control lines. Single positive voltage supply Low harmonics (Typical -73dBc at Pin=+34.5dBm) High Isolation (30 dB @ 900 MHz) Filtronic Advanced GaAs pHEMT Technology (at 25C°, [Vctrl 0,+2.7V], 50 Ohm system, under CW ) Condition Min. Typ. Max. Unit 1 0.45 dB 2 0.55 dB 3 0.5 dB 1 35 dB 2 26 dB 1 -25 dB 2 -18 dB 3 -74 dBc 3 -73 dBc 3 2.9 mA 3 3.2 mA Electrical Characteristics Parameter Insertion Loss Isolation – RF – Ant on. S11 S11 Harmonics Symbol IL ISO S11 S11 2fo 3fo IlkTx IlkRx Leakage Current - Tx Leakage Current – Rx Condition 1 Small signal, DC – 1GHz, Vctrl = 2.7V/0V 2 Small signal, 1-2 GHz, Vctrl = 2.7V/0V 3 Input power=34.5dBm, EGSM Tx 880-915MHz, Vctrl=2.7V/0V GaAs MMIC’s are ESD sensitive devices. Special handling precautions are required. Truth Table Operation RF1-Ant RF2-Ant RF3-Ant Vctrl 1 HIGH 0 0 Control Voltage Vctrl 2 0 HIGH 0 Vctrl 3 0 0 HIGH Control values Control High Low Min Typ. 2.7 0.0 Max Unit V V Preliminary specifications subject to change without notice Filtronic Compound Semiconductors (UK) Contact Details: Te...