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FMMV105G

Part Number	FMMV105G
Manufacturer	Zetex Semiconductors
Description	SILICON PLANAR VARIABLE CAPACITANCE DIODE
Published	Apr 1, 2005
Detailed Description	SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 FMMV105G 2 1 PARTMARKING DE...
Datasheet	FMMV105G PDF File

Overview

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 FMMV105G 2 1 PARTMARKING DETAILS FMMV105G – 4EZ 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance Diode Capacitance Temperature Coefficient SYMBOL V BR MIN.
30 TYP.
MAX.
UNIT V CONDITIONS.
I R = 10 µ A V R = 28V f=250MHz IR LS T CC 3.
0 280 10 nA nH ppm/ °C V R = 3V, f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Diode Capa...

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