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FMMTL717 Datasheet

Part Number FMMTL717
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
Datasheet FMMTL717 DatasheetFMMTL717 Datasheet (PDF)

SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77 FMMTL717 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot .

  FMMTL717   FMMTL717






Part Number FMMTL717
Manufacturers Diodes
Logo Diodes
Description PNP HIGH GAIN MEDIUM POWER TRANSISTOR
Datasheet FMMTL717 DatasheetFMMTL717 Datasheet (PDF)

A Product Line of Diodes Incorporated FMMTL717 12V PNP HIGH GAIN MEDIUM POWER TRANSISTOR IN SOT23 Features • BVCEO > -12V • IC = -1.25A Continuous Collector Current • ICM = -4A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -240mV @ -1A • RCE(SAT) = 160mΩ for a low equivalent on-resistance • 500mW power dissipation • hFE characterised up to -3A for high current gain hold-up • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu.

  FMMTL717   FMMTL717







Part Number FMMTL717
Manufacturers Kexin
Logo Kexin
Description Medium Power Transistor
Datasheet FMMTL717 DatasheetFMMTL717 Datasheet (PDF)

SMD Type TransistIoCrs Medium Power Transistor FMMTL717 Features Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipatio.

  FMMTL717   FMMTL717







PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77 FMMTL717 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE -12 -12 -5 -1.25 -4 -200 -500 -55 to +150 UNIT V V V A A mA mW °C FMMTL717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. -12 -12 -5 TYP. -35 -25 -8.5 -10 -10 -10 -24 -94 -160 -200 -970 -875 300 300 180 100 50 490 450 275 180 110 205 15 76 149 20 MHz pF ns ns -40 -140 -240 -290 -1100 -1000 MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VEB=-4V VCE=-10V IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.25A,IB=-50mA IC=-1.25A, IB=-50mA* IC=-1.25A, VCE=-2V* IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz IC=-1A, VCC=-10V IB1=IB2=-10mA Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO VCE(sat) Collector Cut-Off Current ICES Collector-Emitter Saturation Voltage Base-Emitter.


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