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FMMT634 Datasheet

Part Number FMMT634
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON POWER DARLINGTON TRANSISTOR
Datasheet FMMT634 DatasheetFMMT634 Datasheet (PDF)

“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734 PARTMARKING DETAIL – 634 FMMT634 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Te.

  FMMT634   FMMT634






Part Number FMMT634
Manufacturers Kexin
Logo Kexin
Description Power Darlington Transistor
Datasheet FMMT634 DatasheetFMMT634 Datasheet (PDF)

SMD Type Transistors Power Darlington Transistor FMMT634 Features 625mW power dissipation Highest current capability SOT23 darlington Very high hFE +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current P.

  FMMT634   FMMT634







Part Number FMMT634
Manufacturers Diodes
Logo Diodes
Description NPN DARLINGTON TRANSISTOR
Datasheet FMMT634 DatasheetFMMT634 Datasheet (PDF)

Features • BVCEO > 100V • IC = 900mA high Continuous Collector Current • ICM = 5A Peak Pulse Current • 625mW Power dissipation • hFE > 5k up to 2A for high current gain hold up • Complementary PNP Type: FMMT734 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Mechanical Da.

  FMMT634   FMMT634







NPN SILICON POWER DARLINGTON TRANSISTOR

“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734 PARTMARKING DETAIL – 634 FMMT634 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 120 100 12 5 900 625 -55 to +150 UNIT V V V A mA mW °C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. FMMT634 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 0.67 0.72 0.75 0.82 0.68 0.85 1.5 MIN. 120 TYP. 170 MAX. UNIT V CONDITIONS. I C=100 µ A I C=10mA* I E=100 µ A V CB=80V V EB=7V V CES=80V I C=100mA, I B=1mA I C=250mA, I B=1mA I C=500mA, I B=5mA I C=900mA, I B=5mA I C=900mA, I B=5mA I C=1A, I B=5mA * I C=1A, I B=5mA * I C =1A, V CE=5V* I C=10mA, V CE=5V.


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