FMMT596

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – 596 7 FMMT596 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -220 -200 -5 -1 -0.3 -200 500 -55 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.35 -1.0 -0.9 100 100 85 35 150 10 nA nA nA V V V V IC=-100µ A IC=-10mA* IE=-100µ A VCB=-200V VEB=-4V VCES=-200V IC=-100mA,IB=-10mA IC=-250mA, IB=-25mA* IC=-250mA,IB=-25mA* IC=-250mA, VCE=-10V* IC=-1mA, VCE=-10V IC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V* IC=-400mA,VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz UNIT V V V A A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio VBE(on) hFE -220 -200 -5 300 Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 143 FMMT596 TYPICAL CHARACTERISTICS 0.4 0.3 0.2 0.1 0 +25 ° C 0.4 0.3 0.2 0.1 0 ...