SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996 PARTMARKING DETAILS 7 FMMT5400 - 1LZ FMMT5401 ...
SOT23 PNP SILICON PLANAR HIGH
VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996 PARTMARKING DETAILS 7 FMMT5400 - 1LZ FMMT5401 - Z2L FMMT5400 FMMT5550 FMMT5401 FMMT5551
FMMT5400 FMMT5401
C B E
COMPLEMENTARY TYPES -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO IC Ptot FMMT5400 FMMT5401 -130 -120 -5 -600 330 -160 -150 -5 -600 330 UNIT V V V mA mW °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMT5400 -130 -120 -5 -100 -100 PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. MAX. MIN. -160 -150 -5
FMMT5401 MAX. UNIT CONDITIONS. V V V nA µA nA µA IC=-100µ A IC=-1mA IE=-10µ A VCB=-100V VCB=-100V, TA=100°C VCB=-120V VCB=-120V, TA=100°C IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-50mA, VCE=-5V V V V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA
-50 -50 50 60 50 240 -0.2 -0.5 -1.0 -1.0 100 300 6.0 40 260 8
Static Forward Current Transfer Ratio Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Transition Frequency Output Capacitance Small Signal Noise Figure
hFE VCE(sat) VBE(sat) fT Cobo hfe NF
30 40 40
-180 -0.2 -0.5 -1.0 -1.0
100
400 6.0
MHz IC=-10mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz IC=-1mA, VCE=-...