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FMMT415 Datasheet

Part Number FMMT415
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON PLANAR AVALANCHE TRANSISTOR
Datasheet FMMT415 DatasheetFMMT415 Datasheet (PDF)

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL – FMMT415 – 415 FMMT417 – 417 FMMT415 FMMT417 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (P.

  FMMT415   FMMT415






Part Number FMMT417
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON PLANAR AVALANCHE TRANSISTOR
Datasheet FMMT415 DatasheetFMMT417 Datasheet (PDF)

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL – FMMT415 – 415 FMMT417 – 417 FMMT415 FMMT417 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (P.

  FMMT415   FMMT415







Part Number FMMT413
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON PLANAR AVALANCHE TRANSISTOR
Datasheet FMMT415 DatasheetFMMT413 Datasheet (PDF)

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 – MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - 413 FMMT413 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (25ns Pulse Width) Power .

  FMMT415   FMMT415







Part Number FMMT4126
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR
Datasheet FMMT415 DatasheetFMMT4126 Datasheet (PDF)

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – MARCH 1995 7 PARTMARKING DETAIL – ZE FMMT4126 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4 V Continuous Collector Current IC -200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBO.

  FMMT415   FMMT415







Part Number FMMT4126
Manufacturers KEXIN
Logo KEXIN
Description Switching Transistors
Datasheet FMMT415 DatasheetFMMT4126 Datasheet (PDF)

SMD Type Switching Transistors FMMT4126 TransistIoCrs Features Switching transistors. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj,Tstg Rating -25 -25 -4 -200 330 -55 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3.

  FMMT415   FMMT415







NPN SILICON PLANAR AVALANCHE TRANSISTOR

SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL – FMMT415 – 415 FMMT417 – 417 FMMT415 FMMT417 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (Pulse Width=20ns) Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL FMMT415 V(BR)CES FMMT417 VCEO(sus) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MIN. 260 320 100 6 0.1 10 0.1 0.5 0.9 15 25 25 40 8 MHz pF TYP. FMMT415 260 100 6 500 60 330 -55 to +150 MAX. UNIT V V V V µA µA µA SOT23 FMMT417 320 100 UNIT V V V mA A mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). CONDITIONS. IC=1mA Tamb= -55 to +150°C IC=1mA IC=100µA IE=10µA VCB=180V VCB=180V, Tamb=100°C VEB=4V IC=10mA, IB=1mA* IC=10mA, IB=1mA* VC=200V, CCE=620pF VC=250V, CCE=620pF IC=10mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, IE=0 f=100MHz Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter-Base Breakdown Voltage V(.


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