SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K...
SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J
FMMT38A FMMT38B FMMT38C
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 80 60 10 800 300 330 -55 to +150 UNIT V V V mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Sustaining
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation
Voltage Base-Emitter Turn-on
Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 500 1000 2000 4000 5000 10000 80 60 10 100 100 1.25 1.8 MIN. MAX. V V V nA nA V V UNIT CONDITIONS. I C=10 A, I E=0 I C=10mA, I B=0 I E=10 A, I C=0 V CB=60V, I E=0 V EB=8V, I C=0 I C=800mA, I B=8mA* I C=800mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V* I C=100mA, V CE=5V* I C=500mA, V CE=5V*
FMMT38A h FE FMMT38B FMMT38C
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device
3 - 100
FMMT38A FMMT38B FMMT38C
TYPICAL CHARA...