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FMA3019QFN

Filtronic Compound Semiconductors

HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE

FMA3019QFN HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE FEATURES (1.7-2.0GHZ): • • • • • • • • • • Preliminary Da...


Filtronic Compound Semiconductors

FMA3019QFN

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Description
FMA3019QFN HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE FEATURES (1.7-2.0GHZ): Preliminary Datasheet v2.1 BOARD PHOTOGRAPH: Balanced low noise amplifier module No external couplers required Excellent 42 dBm Output IP3 28.5 dBm Output Power (P1dB) Excellent Return Loss (RL): -25dB 14 dB Small-Signal Gain (SSG) 1.7 dB Noise Figure 6 V supply (380mA current) Cost effective footprint: 4mm x 4mm QFN 6 mm x 6mm evaluation board available RoHS compliant: (Directive 2002/95/EC) GENERAL DESCRIPTION: The BA2250QFN MMIC module is a selfbiased, integrated and packaged balanced amplifier mounted onto 6x6mm2 FR4 board. The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. TYPICAL APPLICATIONS: Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs ELECTRICAL SPECIFICATIONS: PARAMETER Frequency Minimum Noise Figure Input Third-Order Intercept Point SYMBOL Freq NF IIP3 CONDITIONS VDS = 6.0 V; IDS = 380mA VDS = 6.0 V; IDS = 380mA VDS = 6.0 V; IDS = 380mA MIN 1.7 1.75 27.5 TYP 1.85 1.8 28.5 MAX 2 2.1 30 UNITS GHz dB dBm Small-Signal Gain Small-Signal Input Return Loss Small-Signal Output Return Loss Power at 1dB...




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