Chip Schottky Barrier Diodes
FM120-S THRU FM1100-S
Silicon epitaxial planer type
Formosa MS
SMA-S
0.205(5.2) 0.189(4.8...
Chip Schottky Barrier Diodes
FM120-S THRU FM1100-S
Silicon epitaxial planer type
Formosa MS
SMA-S
0.205(5.2) 0.189(4.8) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.071(1.8) 0.060(1.5) 0.063(1.6) 0.055(1.4)
0.106(2.7) 0.091(2.3)
0.181(4.6) 0.165(4.2)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current www.DataSheet4U.com Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 88 120 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse
voltage
IR
C
SYMBOLS
MARKING CODE SS12 SS13 SS14 SS15 SS16 SS18 S110
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM120-S FM130-S FM140-S FM150-S FM160-S FM180-S FM1100-S 20 30 40 50 60 80 100
(V)...