DatasheetsPDF.com

FM130-S

Formosa MS

Chip Schottky Barrier Diodes

Chip Schottky Barrier Diodes FM120-S THRU FM1100-S Silicon epitaxial planer type Formosa MS SMA-S 0.205(5.2) 0.189(4.8...


Formosa MS

FM130-S

File Download Download FM130-S Datasheet


Description
Chip Schottky Barrier Diodes FM120-S THRU FM1100-S Silicon epitaxial planer type Formosa MS SMA-S 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.071(1.8) 0.060(1.5) 0.063(1.6) 0.055(1.4) 0.106(2.7) 0.091(2.3) 0.181(4.6) 0.165(4.2) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current www.DataSheet4U.com Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 88 120 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SS12 SS13 SS14 SS15 SS16 SS18 S110 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) FM120-S FM130-S FM140-S FM150-S FM160-S FM180-S FM1100-S 20 30 40 50 60 80 100 (V)...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)