FLM5964-45F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.)...
FLM5964-45F
C-Band Internally Matched FET
FEATURES High Output Power: P1dB=47.0dBm(Typ.) High Gain: G1dB=8.5dB(Typ.) High PAE: hadd=39%(Typ.) Broad Band: 5.9 to 6.4GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source
Voltage VDS Gate-Source
Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115 -65 to +175 175 Limit <= 10 <= 108 >=-23.2 Limit Typ. 24 16 -1.5 47.0 8.5 11 39 -40 Unit V V W deg.C deg.C Unit V mA mA
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input
Voltage VDS Forward Gate Current IGF RG=10ohm Reverse Gate Current IGR RG=10ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Transconductance Pinch-off
Voltage Gate-Source Breakdown
Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG IM3 Rth DTch Condition VDS=5V, V GS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS=-960uA VDS=10V f= 5.9 to 6.4 GHz IDS(DC)=8.0A (typ.) Zs =ZL=50 ohm f=6.4 GHz Df=10MHz, 2-tone Test Pout=35.5dBm(S.C.L.) Channel to Ca...
