FLK207XV

FLK207XV GaAs FET & HEMT Chips FEATURES www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25°C 12.5 -65 to +175 175 Unit V V W °C °C Gate Gate Gate Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with gate resistance of 250Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Channel to Case VDS = 10V IDS ≈ 0.6IDSS f = 14.5GHz Tes...