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Advanced Technical Information
Fast IGBT Chopper
in ISOPLUS i4-PACTM
FII 30-12D IC25
VCES VCE(sat...
www.DataSheet4U.com
Advanced Technical Information
Fast IGBT Chopper
in ISOPLUS i4-PACTM
FII 30-12D IC25
VCES VCE(sat) typ.
= 30 A = 1200 V = 2.3 V
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 30 18 35 VCES 10 125 V V A A A µs W
Features NPT IGBT - low saturation
voltage - no latch up - positive temperature coefficient for easy paralleling HiPerFREDTM diode - fast reverse recovery - low operating forward
voltage - low leakage current ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications single phaseleg - buck-boost chopper H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier three phase bridge - AC drives - controlled rectifier
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.6 4.5 0.9 200 100 75 500 70 3.0 2.4 1000 70 3.0 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.0 K/W
VCE(sat) VGE(th)
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ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ ...