FHZxVx

¹ã¶«Ê¡ÕØÇì з绪 18 ºÅ·ç»ªµ×Ó¹¤Ò³ÇÈýºÅÂ¥» TEL:0758-2865088 2865091 FAX:0758-2849749 FHZ2V4~FHZ39V Silicon Z-Diodes Features Very sharp reverse characteristic Very high stability Low reverse current level VZ-tolerance ± 5% Applications Voltage stabilization www.DataSheet4U.com Absolute Maximum Ratings Parameter Power dissipation ºÄÉ¢¹¦ÂÊ Z-current ÎÈѹµçÁ÷ Junction temperature ½áΠStorage temperature range ´¢æÎÂ¶È Test Conditions RthJA<300K/W, Tamb=25°C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA °C °C Maximum Thermal Resistance Parameter Test Conditions Symbol Value Unit RthJA 500 K/W Junction ambient on PC board 50mmx50mmx1.6mm Electrical Characteristics Parameter Forward voltage Test Conditions Type Symbol Min Typ Max Unit IF=100mA VF 1.2 V Type VZnom1) Test current IZT Maximum zeber Impedance ZZT ZZK at at IZT IZK=1mA IR µA 50 10 Maximum Reverse Leakage Current Test-Voltage Volts 1.0 1.0 Forward Voltage Vf at If=100mA V 1.2 1.2 Temperature coefficient V FHZ2V4 2.28-2.56 FHZ2V7 2.5-2.9 mA 5 5 Ohm 85 85 Ohm 600 600 %/°C -0.070 -0.070 Page 0 of 3 *2005 ÄêµÚ 2 °æ * All Rights Reserved ¹ã¶«Ê¡ÕØÇì з绪 18 ºÅ·ç»ªµ×Ó¹¤Ò³ÇÈýºÅÂ¥» TEL:0758-2865088 2865091 FAX:0758-2849749 Type VZnom1) Test current IZT Maximum zeber Impedance ZZT ZZK at at IZT IZK=1mA IR µA 4 2 2 2 1 Maximum Reverse Leakage Current Test-Voltage Volts 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.0 7.0 7.5 85 90 10 11 12 14 15 17 18 20 Forward Voltage V...