FH1100

www.DataSheet4U.com FH1100 SILICON DIODE DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. PACKAGE STYLE DO-7 FEATURES INCLUDE: QS = 1.6 pC Typ. C = 1.0 pF Max. @ f = 890 MHz Hermetic Glass Package MAXIMUM RATINGS IF VR PDISS TJ TSTG Tsoldering 10 mA 5.0 V 100 mW @ TC = 25 °C -65 °C to +125 °C -65 °C to +150 °C +260 °C for 5 Seconds CHARACTERISTICS SYMBOL VF IR VBR CT0 NF QS IF = 10 mA IF = 10 mA VR = 1.0 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 550 1.0 UNITS mV µA V IR = 100 µA VR = 0 V f = 1.0 MHz f = 890 MHz 5.0 1.0 10 1.6 pF dB pC A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...