FGH50T65SQD

IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Max Junction Temperature TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A 100% of the Parts Tested for ILM High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC www.onsemi.com VCES 650 V IC 50 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH50T65 SQD © Semiconductor Components Industries, LLC, 2016 November, 2019 − Rev. 3 $Y &Z &3 &K FGH50T65SQD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH50T65SQD/D FGH50T65SQD ABSOLUTE MAXIMUM RATINGS Symbol Description FGH50T65SQD−F155 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current TC = 25°C 100 A TC = 100°C 50 A ILM (Note 1) Pulsed ...