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FGA180N30D 300V PDP IGBT
June 2006
FGA180N30D
300V PDP IGBT
Features
• High Current Capability • ...
www.DataSheet4U.com
FGA180N30D 300V PDP IGBT
June 2006
FGA180N30D
300V PDP IGBT
Features
High Current Capability Low saturation
voltage: VCE(sat), Typ = 1.1 V@ IC = 40A High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.
C
G
TO-3P
G C E
E
Absolute Maximum Rating TC = 25oC unless otherwise noted
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL
Notes:
Description
Collector-Emitter
Voltage Gate-Emitter
Voltage Collector Current Pulsed Collector Current
(Note 1)
FGA180N30D
300 ± 30 @ TC = 25°C @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C 180 450 10 40 480 192 -55 to +150 300 300
Units
V V A A A A W W °C °C °C
Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
(1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
0.26 1.56 40
Units
°C/W °C/W °C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA180N30D Rev. A
FGA180N30D 300V PDP IGBT
Package M...