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FFPF08S60S

Fairchild Semiconductor

Stealth 2 Diode

FFPF08S60S Stealth 2 Rectifier April 2007 FFPF08S60S Stealth 2 Rectifier Features • High Speed Switching ( Max. trr<30...


Fairchild Semiconductor

FFPF08S60S

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FFPF08S60S Stealth 2 Rectifier April 2007 FFPF08S60S Stealth 2 Rectifier Features High Speed Switching ( Max. trr<30ns @ IF=8A ) High Reverse Voltage and High Reliability Avalanche Energy Rated tm 8A, 600V Stealth 2 Rectifier The FFPF08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power factor corrections Power switching circuits Pin Assignments TO-220F-2L 1. Cathode 2. Anode www.DataSheet4U.com 1 1. Cathode 2 2. Anode Absolute Maximum Ratings Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG TC = 25°C unless otherwise noted Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature = 25°C unless otherwise noted Value 600 600 600 @ TC = 95 °C 8 80 - 65 to +150 Units V V V A A °C Thermal Characteristics T Symbol RθJC C Parameter Maximum Therm...




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