FDY301NZ

www.DataSheet4U.com FDY301NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V ESD protection diode (note 3) RoHS Compliant Applications Li-Ion Battery Pack 1 S G G 1 3 S 2 D D Absolute Maximum Ratings Symbol VDSS VGSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Ratings 20 (Note 1a) 1a) Units V V ID Drain Current PD – Continuous – Pulsed Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1 TJ, TSTG Operating and Storage Junction Temperature Range ± 12 200 1000 625 446 –55 to +150 mA mW °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 280 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity D FDY301NZ 7’’ 8 mm 3000units ©2006 Fairchild Semiconductor Corporation FDY301NZ Rev A www.fairchildsemi.com FDY301NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage D...