FDY3000NZ

www.DataSheet4U.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V ESD protection diode (note 3) RoHS Compliant Applications Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o S1 G1 D2 1 6 D1 2 3 5 4 G2 S2 Parameter Drain-Source Voltage Gate-Source Voltage – Continuous – Pulsed Power Dissipation (Steady State) Drain Current (Note 1a) Ratings 20 ± 12 600 1000 625 446 –55 to +150 Units V V mA mW °C (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking C Device FDY3000NZ Reel Size 7 ’’ Tape width 8 mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY3000NZ Rev A www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient...