Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
Very low Qg and Qgd compared to competing trench technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild Sem...
FDT86256 PDF File
