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FDS9933BZ

Fairchild Semiconductor
Part Number FDS9933BZ
Manufacturer Fairchild Semiconductor
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Published Dec 28, 2015
Detailed Description FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTr...
Datasheet PDF File FDS9933BZ PDF File

FDS9933BZ
FDS9933BZ

Overview
FDS9933BZ Dual P-Channel 2.
5V Specified PowerTrench® MOSFET March 2008 FDS9933BZ Dual P-Channel 2.
5V Specified PowerTrench® MOSFET tm -20V, -4.
9A, 46mΩ Features General Description „ Max rDS(on) = 46mΩ at VGS = -4.
5V, ID = -4.
9A „ Max rDS(on) = 69mΩ at VGS = -2.
5V, ID = -4.
0A „ Low gate charge (11nC typical).
„ High performance trench technology for extremely low rDS(on).
„ HBM ESD protection level >3kV (Note 3).
„ RoHS Compliant These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These...


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