FDS8935 Dual P-Channel PowerTrench® MOSFET
FDS8935
Dual P-Channel PowerTrench® MOSFET
-80 V, -2.1 A, 183 mΩ
November 2010
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on)
This P-channel MOSFET is produced u...
