FDS89161

FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications „ Synchronous Rectifier „ Primary Switch For Bridge Topology D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 Q2 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note1a) Ratings 100 ±20 2.7 15 13 31 1.6 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 40 (Note 1a) 78 °C/W Dev...