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„ rDS(ON) = 14mΩ, VGS = 10V, ID = 10.2A „ rDS(ON) = 17mΩ, VGS = 4.5V, ID = 9.3A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability General Description This N-Channel MOSFET h...

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