General Description
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on)
This N -Channel MOSFET is produ ced using ON Semiconductor‘s advanced...
FDS86242 PDF File
