FDS8449

www.DataSheet4U.com FDS8449 40V N-Channel PowerTrench®MOSFET December 2005 FDS8449 40V N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features 7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V High power handling capability in a widely used surface mount package RoHS compliant Application Inverter Power Supplies D D SO-8 D D DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 40 ±20 (Note 1a) Units V V A W °C 7.6 50 2.5 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 50 125 25 °C/W Package Marking and Ordering Information Device Marking FDS8449 Device FDS8449 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2005 Fairchild Semiconductor Corporation FDS8449 Rev B(W) www.fairchildsemi.com FDS8449 40V N-Channel PowerTrench®MOSFET Electrical Characteristics Symbol EAS IAS BVDSS Δ...