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Fairchild Semiconductor
Fairchild Semiconductor


FDS6990AS

MOSFET

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FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™

M

FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™

March 2010

Features
■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V
■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low
RDS(ON) ■ High power and current handling capability
Applications
■ DC/DC converter ■ Motor drives

General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.

D1 D1 D2
D2

SO-8 Pin 1

G1 S1 G2 S


























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