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Fairchild Semiconductor
Fairchild Semiconductor


FDS6699S

MOSFET

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FDS6699S 30V N-Channel PowerTrench® SyncFET™

FDS6699S 30V N-Channel PowerTrench® SyncFET™

December 2012

Features
■ 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
■ Includes SyncFET Schottky body diode ■ High performance trench technology for extremely low
RDS(ON) and fast switching ■ High power and current handling capability ■ 100% RG (Gate Resistance) tested
Applications
■ Synchronous Rectifier for DC/DC Converters – ■ Notebook Vcore low side switch ■ Point of Load low side switch

General Description
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

D D D D

SO-8

G SS S

54 63 72 81

Absolute Maximum Ratings TA=25°C unless otherwise noted

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