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„ RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A „ RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A „ High performance trench technology for extremely low RDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the...

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