FDS6692
September 2003
FDS6692
30V N-Channel PowerTrench ® MOSFET
General Description
This N-Channel MOSFET has been d...
FDS6692
September 2003
FDS6692
30V N-Channel PowerTrench ®
MOSFET
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
12 A, 30 V. RDS(ON) = 12 mΩ @ V GS = 10 V. RDS(ON) = 14.5 mΩ @ V GS = 4.5 V
Applications
DC/DC converter
High performance trench technology for extremely low RDS(ON) Low gate charge (18 nC typical) High power and current handling capability
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous – Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
30 ± 16
(Note 1a)
Units
V V A W
12 50 2.5 1.2 1.0 -55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
° C/W ° C/W ° C/W
Package Marking and Ordering Information
Device Marking FDS6692 Device FDS6692 Reel Size 13’’ Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6692 Rev D (W)
FDS6692
Electrical Characteristics
Symbol Parameter Off Ch...