October 1998
FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level...
October 1998
FDS6675 Single P-Channel, Logic Level, PowerTrenchTM
MOSFET
General Description
This P-Channel Logic Level
MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D D
D
5
4 3 2 1
S FD 75 66
pin 1
6
G
7 8
SO-8
S S
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
FDS6675 Units
VDSS VGSS ID PD
Drain-Source
Voltage Gate-Source
Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
-30 ±20 -11 -50 2.5 1.2 1 -55 to 150
V V A
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDS6675 Rev.C1
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Param...