FDS6673AZ
January 2005
FDS6673AZ
30 Volt P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET has b...
FDS6673AZ
January 2005
FDS6673AZ
30 Volt P-Channel PowerTrench
MOSFET
General Description
This P-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These
MOSFETs feature faster switching and lower gate charge than other
MOSFETs with comparable RDS(ON) specifications. The result is a
MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
–14.5 A, –30 V. RDS(ON) = 7.2 mΩ @ VGS = –10 V RDS(ON) = 11 mΩ @ VGS = – 4.5 V Extended VGSS range (–25V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
–30 +25
(Note 1a)
Units
V V A W
–14.5 –50 2.5 1.2 1.0 –55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6673AZ Device FDS...