FDP75N08A

FDP75N08A — N-Channel UniFETTM MOSFET FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Features 75 A, 75 V, RDS(on) = 11 mΩ @ VGS = 10 V Low Gate Charge (Typ. 145 nC) Low Crss (Typ. 86 pF) Fast Switching Improved dv/dt Capability December 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) ©2006 Fairchild Semiconductor Corporation 1 FDP75N...